๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Zero-temperature-coefficient biasing point of partially depleted SOI MOSFET's

โœ Scribed by Osman, A.A.; Osman, M.A.; Dogan, N.S.; Imam, M.A.

Book ID
114536169
Publisher
IEEE
Year
1995
Tongue
English
Weight
277 KB
Volume
42
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Zero-temperature-coefficient biasing poi
Zero-temperature-coefficient biasing point of a fully-depleted SOI MOSFET
โœ T. H. Tan; A. K. Goel ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 327 KB

## Abstract The gate characteristics (__I__~__D__~โ€“__V__~__GS__~) of fully depleted, lightly doped, enhanced SOI __n__โ€MOSFET are simulated over a wide range of operating temperature (300โ€“600 K) by using the SILVACO TCAD tools. Simulation results show that there exists a biasing point where the dra

The temperature mobility degradation inf
The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETs
โœ L.M. Camillo; J.A. Martino; E. Simoen; C. Claeys ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 184 KB

The zero temperature coefficient (ZTC) is investigated experimentally in partially (PD) and fully depleted (FD) SOI MOSFET fabricated in a 0.13 mm SOI CMOS technology. A simple model to study the behavior of the gate voltage at ZTC (V ZTC ) is proposed in the linear and the saturation region. The in