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XPS study of thin films of titanium oxysulfides

✍ Scribed by D. Gonbeau; C. Guimon; G. Pfister-Guillouzo; A. Levasseur; G. Meunier; R. Dormoy

Publisher
Elsevier Science
Year
1991
Weight
68 KB
Volume
254
Category
Article
ISSN
0167-2584

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## Abstract The energies of photoelectron and Auger lines of gallium and nitrogen in GaN thin films obtained by reactive sputtering are derived. From previous RBS investigations, such were found to be stoichiometric in the bulk. The XPS surface analysis of the films gives a chemical content of ∼20%