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XAS study of Sn-related DX centers in (Al, Ga)As

✍ Scribed by J. Pant; L.B. Lurio; T.M. Hayes; D.L. Williamson; P. Gibart; T.N. Theis

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
143 KB
Volume
208-209
Category
Article
ISSN
0921-4526

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The coexistence of the DX center with other donor-related bound states has been investigated in Si-doped direct gap AI,Ga I \_ xAs, by comparing electron density data obtained by capacitance/voltage and Hall measurements. These experiments were carried out under saturated persistent photoconductivit