Optical Spectroscopic Study of Carrier Processes in Self-Assembled In(Ga)As–Ga(Al)As Quantum Dot Lasers
✍ Scribed by K.M. Groom; A.D. Ashmore; D.J. Mowbray; M.S. Skolnick; M. Hopkinson; G. Hill; J. Clark; P.M. Smowton
- Publisher
- John Wiley and Sons
- Year
- 2001
- Tongue
- English
- Weight
- 107 KB
- Volume
- 224
- Category
- Article
- ISSN
- 0370-1972
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We use time-resolved photoluminescence spectroscopy to probe the relaxation of excited states in In 0.5 Al 0.04 Ga 0.46 As/Al 0.08 Ga 0.92 As self-assembled quantum dots. The relaxation rate of excitons confined to the quantum dots increases by nearly an order of magnitude as the energy of the state
The photoluminescence (PL) of In 0.55 Al 0.45 As/Al 0.5 Ga 0.5 As self-assembled quantum dots has been measured at 15 and 80 K under hydrostatic pressure. The lateral size of the dots ranges from 7 to 62 nm. The emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, ind