Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s
β¦ LIBER β¦
X-ray reflectivity of multiple delta-type doping profiles in silicon
β Scribed by J. Keimel; A. Krutzenbichler; G. Fritsch
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 166 KB
- Volume
- 198
- Category
- Article
- ISSN
- 0921-4526
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