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X-ray photoelectron spectroscopy of Se films grown by hot wall epitaxy

✍ Scribed by Amarjit Singh


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
182 KB
Volume
59
Category
Article
ISSN
0038-1098

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X-ray photoelectron spectroscopy of ther
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At various stages of in situ therm31 oxiclztion of Si(lll) monocrystals, X-ray photoelectron spectroscopy (XPS or ESCA) t-eve& a shift in the silicon core-level binding energies which vties continuously from 2.4 to 4.2 eV. From the oxygen &d silicon ESCA peak intensities, these films un be said to h