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X-ray induced variation of the chemistry of GaAs/AlAs oxide nanostructures

✍ Scribed by G. Mori; M. Lazzarino; D. Ercolani; G. Biasiol; A. Locatelli; L. Sorba; S. Heun

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
363 KB
Volume
246
Category
Article
ISSN
0168-583X

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✍ Jose Fayos; Mercedes Perez-Mendez πŸ“‚ Article πŸ“… 1993 πŸ› Elsevier Science 🌐 English βš– 225 KB

Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on \(\mathrm{GaAs}(001)\) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice