๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

X-ray diffraction study of a semiconductor/electrolyte interface: n-GaAs(001)H2SO4(:Cu)

โœ Scribed by J. Zegenhagen; A. Kazimirov; G. Scherb; D.M. Kolb; D.-M. Smilgies; R. Feidenhans'l

Book ID
116067779
Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
589 KB
Volume
352-354
Category
Article
ISSN
0039-6028

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

X-Ray Diffraction Analysis of the In/Ga
X-Ray Diffraction Analysis of the In/Ga and In/Al Interface Diffusion in Superlattices (GaAs)n(InAs)(AlAs)n/GaAs(001) and (AlAs)n(InAs)(GaAs)n/GaAs(001)
โœ Jose Fayos; Mercedes Perez-Mendez ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 225 KB

Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on \(\mathrm{GaAs}(001)\) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice