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X-ray diffraction on precipitates in Czochralski-grown silicon

✍ Scribed by O. Caha; M. Meduňa

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
347 KB
Volume
404
Category
Article
ISSN
0921-4526

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The intensity of the infrared absorption band at 1107 cm À 1 , related to interstitial oxygen (O i ) concentration, decreased as the Ge concentration increased in Ga and Ge codoped CZ-Si crystals. In contrast, the number of precipitates observed on the etched surfaces of CZ-Si wafers increased as th