Defect transformation study in silicon-o
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V.P. Popov; I.V. Antonova; J. Bak-Misiuk; J. Domagala
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Article
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2001
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Elsevier Science
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English
⚖ 130 KB
Silicon-on-insulator (SOI) structures were fabricated by bonding using a new variant of Smart-Cut technology. Asbonded SOI structures are annealed at high temperature (11008C) for removal of hydrogen, radiation defects and stresses at the bonding interface. The transformation of structural parameter