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X-ray diffraction imaging investigation of silicon carbide on insulator structures

✍ Scribed by S. Milita; Y. Le Tiec; E. Pernot; L. Di Cioccio; J. Härtwig; J. Baruchel; M. Servidori; F. Letertre


Publisher
Springer
Year
2002
Tongue
English
Weight
245 KB
Volume
75
Category
Article
ISSN
1432-0630

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Silicon-on-insulator (SOI) structures were fabricated by bonding using a new variant of Smart-Cut technology. Asbonded SOI structures are annealed at high temperature (11008C) for removal of hydrogen, radiation defects and stresses at the bonding interface. The transformation of structural parameter