✦ LIBER ✦

Defect transformation study in silicon-on-insulator structures by high-resolution X-Ray diffraction

✍ Scribed by V.P. Popov; I.V. Antonova; J. Bak-Misiuk; J. Domagala

Publisher: Elsevier Science
Year: 2001
Tongue: English
Weight: 130 KB
Volume: 4
Category: Article
ISSN: 1369-8001
DOI: 10.1016/s1369-8001(00)00157-8

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✦ Synopsis

Silicon-on-insulator (SOI) structures were fabricated by bonding using a new variant of Smart-Cut technology. Asbonded SOI structures are annealed at high temperature (11008C) for removal of hydrogen, radiation defects and stresses at the bonding interface. The transformation of structural parameters in as-bonded and annealed SOI structures was investigated by high-resolution X-ray diffraction. The large strain observed for as-bonded SOI structures is relaxed during annealing at high temperature and final SOI wafer has strain-free top silicon layer due to defect annealing and viscous flow of SiO 2 . FWHM value for SOI film is higher than that for typical silicon single crystal and is caused by mosaic-like structure only.

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