X-ray diagnostics of P-HEMT AlGaAs/InGaAs/GaAs structures
β Scribed by I. A. Subbotin; M. A. Chuev; E. M. Pashaev; R. M. Imamov; G. B. Galiev; S. A. Tikhomirov; P. Kacerovsky
- Book ID
- 111437804
- Publisher
- SP MAIK Nauka/Interperiodica
- Year
- 2007
- Tongue
- English
- Weight
- 326 KB
- Volume
- 52
- Category
- Article
- ISSN
- 1063-7745
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π SIMILAR VOLUMES
The pseudomorphic high electron mobility transistor (P-HEMT) structure materials Al 0.33 Ga 0.7 As/In 0.1 Ga 0.9 As/GaAs have been grown by molecular beam epitaxy (MBE) on (311)A and (111)A GaAs substrates. The epitaxy of strain heterostructure on high index GaAs substrate has led to new growth phen
Experimental X-ray double crystal diffraction rocking curves for different InGaAs/ GaAs superlattices grown by molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) are used to obtain theoretically calculated rocking curves, based on Takagi's theory of dynamic X-ray diffr