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Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures

✍ Scribed by R. A. Khabibullin; I. S. Vasil’evskii; G. B. Galiev; E. A. Klimov; D. S. Ponomarev; V. P. Gladkov; V. A. Kulbachinskii; A. N. Klochkov; N. A. Uzeeva

Book ID
111444935
Publisher
Springer
Year
2011
Tongue
English
Weight
211 KB
Volume
45
Category
Article
ISSN
1063-7826

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## Abstract The influence of an electric field on the energy spectrum and the probability of optical transitions in InGaAs/GaAs single quantum wells (QWs) of different widths has been investigated with photo‐ and electroreflectance techniques. The electric field in the area of a QW is varied in a w