X-ray absorption study of light emitting silicon nanocrystals

✍ Scribed by N. Daldosso; G. Dalba; R. Grisenti; L. Dal Negro; L. Pavesi; F. Rocca; F. Priolo; G. Franzò; D. Pacifici; F. Iacona

• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 109 KB
• Volume: 16
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/s1386-9477(02)00610-0

✦ Synopsis

X-ray absorption spectra obtained by total electron yield (TEY) at the Si absorption K-edge have been measured to have chemical and structural information about Si nanocrystals (Si-nc) produced by plasma-enhanced chemical vapour deposition (PECVD). The TEY technique has been employed to investigate the formation of Si-nc and the modiÿcation of the silica matrix as a function of annealing temperature (500 -1250 • C) and of silicon content in the ÿlm (35 -46 at%). The amount of silicon present in the Si-nc has been evaluated by TEY. Thanks to Rutherford backscattering spectrometry measurements, the amount of Si atoms bonded to oxygen and to nitrogen, incorporated by PECVD, has been assessed. A compositional model that interprets the experimental ÿndings is presented.