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Window for better reliability of nitride heterostructure field effect transistors

✍ Scribed by A. Matulionis; J. Liberis; E. Šermukšnis; L. Ardaravičius; A. Šimukovič; C. Kayis; C.Y. Zhu; R. Ferreyra; V. Avrutin; Ü. Özgür; H. Morkoç


Book ID
119326705
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
719 KB
Volume
52
Category
Article
ISSN
0026-2714

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## Abstract The fluctuation‐based technique has been used to shed light onto the physical processes responsible for the performance of nitride heterostructure field effect transistors. A non‐monotonic dependence of hot‐phonon lifetime on the density of two‐dimensional electron gas (2DEG) is found a