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Incorporation of dielectric layers into the processing of III-nitride-based heterostructure field-effect transistors

✍ Scribed by D. Mistele; T. Rotter; A. Horn; O. Katz; Z. Bougrioua; J. Aderhold; J. Graul; G. Bahir; J. Salzman


Book ID
107453023
Publisher
Springer US
Year
2003
Tongue
English
Weight
272 KB
Volume
32
Category
Article
ISSN
0361-5235

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