Wigner crystallization and Coulomb gap in HgSe:Fe
β Scribed by W. Jantsch; G. Hendorfer; Z. Wilamowski; A. Mycielski
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 220 KB
- Volume
- 5
- Category
- Article
- ISSN
- 0749-6036
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β¦ Synopsis
The temperature dependence of the (\mathrm{Fe}^{3+}-\mathrm{BPR}) in (\mathrm{HgSe}) in the mixed (\mathrm{Fe}^{2+/ 3+}) valence regime is interpreted in terms of lifetime broadening due to resonant scattering: Evaluation of experimental data shows a minimum in the defect density of states at the Fermi level constituting evidence for a Coulomb gap and thus for Wigner crystallization.
π SIMILAR VOLUMES
High magnetic field magnetization measurements of Hg~ \_ x Fex Sex \_ y Sy (x = 0.002, y = 0.17; y = 0.28) at temperatures ranging from 1.6 to 119 K and in magnetic fields up to 20 T are reported. The magnetization of the Fe 2 + (3d 6) ion in the investigated mixed anion crystals is shown to be diff
We have measured the low temperature resistance in amorphous Si x Ge 1Β± Β±x alloy films. Fitting to the theoretical results, we found two kinds of transport regime in the low temperature transport, variable range hopping type (T Γ1/4 ) and Coulomb gap type (T Γ1/2 ), and can determine the crossover t