Coulomb Gap Energy in Amorphous SixGe1–x Films

✍ Scribed by N. Aoki; K. Nara; Y. Ochiai

• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 159 KB
• Volume: 218
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/(sici)1521-3951(200003)218:1<5::aid-pssb5>3.0.co;2-j

✦ Synopsis

We have measured the low temperature resistance in amorphous Si x Ge 1± ±x alloy films. Fitting to the theoretical results, we found two kinds of transport regime in the low temperature transport, variable range hopping type (T À1/4 ) and Coulomb gap type (T À1/2 ), and can determine the crossover temperature. The crossover temperature clearly depends on the ratio of the alloy composition.