We have measured the low temperature resistance in amorphous Si x Ge 1± ±x alloy films. Fitting to the theoretical results, we found two kinds of transport regime in the low temperature transport, variable range hopping type (T À1/4 ) and Coulomb gap type (T À1/2 ), and can determine the crossover t
✦ LIBER ✦
Structural and energy gap variations in (ZnTe)x(CdSe)1−x thin films
✍ Scribed by K.N. Raju; R.P. Vijayalakshmi; D. Raja Reddy; B.K. Reddy
- Publisher
- Elsevier Science
- Year
- 1992
- Tongue
- English
- Weight
- 305 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0022-3697
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