We have measured the low temperature resistance in amorphous Si x Ge 1± ±x alloy films. Fitting to the theoretical results, we found two kinds of transport regime in the low temperature transport, variable range hopping type (T À1/4 ) and Coulomb gap type (T À1/2 ), and can determine the crossover t
✦ LIBER ✦
Energy and dielectric relaxation in the Coulomb gap
✍ Scribed by M. Mochena; M. Pollak; J. Ruiz; M. Ortuño
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 274 KB
- Volume
- 201
- Category
- Article
- ISSN
- 0378-4371
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