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Wet sulfur passivation of GaSb(1 0 0) surface for optoelectronic applications

✍ Scribed by E.V. Kunitsyna; T.V. L’vova; M.S. Dunaevskii; Ya.V. Terent’ev; A.N. Semenov; V.A. Solov’ev; B.Ya. Meltser; S.V. Ivanov; Yu.P. Yakovlev

Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
743 KB
Volume
256
Category
Article
ISSN
0169-4332

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✦ Synopsis

A comparative analysis of the properties of the non-passivated and S-passivated GaSb(1 0 0) surfaces has been performed through PL, AFM and RHEED characterization. The samples treated with a 1 M Na 2 S aqueous solution demonstrate an increase in the 5 K PL intensity. According to AFM data, the annealing of the S-passivated GaSb(1 0 0) leads to the formation of the clean flat (1 0 0) surface. Moreover, after annealing the PL intensity of the S-passivated GaSb(1 0 0) surfaces decreases by 20%, whereas for the nonpassivated samples it drops by more than a factor of 4. The method of wet sulfur passivation has shown great effectiveness in pre-epitaxial processing for LPE and MBE growth of the GaSb-related materials for optoelectronics.

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