X-ray photoelectron spectroscopy and atomic force microscopy were used to examine the chemical composition and surface morphology of InAs(1 1 1)A surface chemically etched in isopropanol-hydrochloric acid solution (HCl-iPA) and subsequently annealed in vacuum in the temperature range 200-500 β’ C. Et
β¦ LIBER β¦
Surface passivation and morphology of GaAs(1 0 0) treated in HCl-isopropanol solution
β Scribed by V.L. Alperovich; O.E. Tereshchenko; N.S. Rudaya; D.V. Sheglov; A.V. Latyshev; A.S. Terekhov
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 642 KB
- Volume
- 235
- Category
- Article
- ISSN
- 0169-4332
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