Sulfur passivation of Ge (0 0 1) surfaces and its effects on Schottky barrier contact
β Scribed by Tatsuro Maeda; Shinichi Takagi; Tsuyoshi Ohnishi; Mikk Lippmaa
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 381 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1369-8001
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During the deposition process of high-k gate oxides on Ge, the Ge interface tends to be oxidized to form GeO x , leading to the introduction of interface states which compromise transistor performance. It has been suggested that a Ba termination layer on Ge could fulfill the same passivating role on
A comparative analysis of the properties of the non-passivated and S-passivated GaSb(1 0 0) surfaces has been performed through PL, AFM and RHEED characterization. The samples treated with a 1 M Na 2 S aqueous solution demonstrate an increase in the 5 K PL intensity. According to AFM data, the annea