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Wear-out and breakdown of rf sputtered Ta2O5films on silicon

✍ Scribed by N. Novkovski; E. Atanassova

Publisher
Springer
Year
2005
Tongue
English
Weight
303 KB
Volume
81
Category
Article
ISSN
1432-0630

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Wear-out and breakdown of thermally grow
Wear-out and breakdown of thermally grown Ta2O5insulating films on plasma oxynitrided Si substrates
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## Abstract Wear‐out and breakdown at constant current stress (__J__ = 10 mA/cm^2^) were studied for Ta~2~O~5~ insulating layers (30 nm thick) thermally grown over plasma oxynitrided (5 to 15 s at room temperature) Si substrates. For injected charges __Q__~inj~ lower than 100 C/cm^2^ hard breakdown

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Interface and oxide properties of Ta 2 O 5 -Si structures with rf sputtered Ta 2 O 5 of 7-80 nm thickness have been investigated using capacitors on p-Si and transistor-like test structures. It is found tha the electrical properties of the films are dominated by an extremely thin SiO 2 layer which i