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Elemental composition and structural properties of thin rf sputtered Ta2O5 layers

โœ Scribed by E Atanassova; T Dimitrova; J Koprinarova

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
376 KB
Volume
46
Category
Article
ISSN
0042-207X

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Interface and oxide properties of rf spu
Interface and oxide properties of rf sputtered Ta2O5- Si structures
โœ T Dimitrova; E Atanassova ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 201 KB

Interface and oxide properties of Ta 2 O 5 -Si structures with rf sputtered Ta 2 O 5 of 7-80 nm thickness have been investigated using capacitors on p-Si and transistor-like test structures. It is found tha the electrical properties of the films are dominated by an extremely thin SiO 2 layer which i