Weak bonds and atomic charge distribution in hydrogenated amorphous silicon
✍ Scribed by Sándor Kugler; Gábor Náray-Szabó
- Book ID
- 117146992
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 256 KB
- Volume
- 137-138
- Category
- Article
- ISSN
- 0022-3093
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We have studied the effect of excess charge on the bond strength in the silanes SiH4 and Si2H6 to assess whether charge trapping in a solid-state lattice might promote the technologically important photodegradation of amorphous silicon alloys (the Staebler-Wronski effect). The calculations indicate
## Abstract We have investigated the distribution of H atoms around native dangling bonds in a‐Si:H by electron‐nuclear double resonance (ENDOR). In contrast to previous electron spin echo envelope modulation (ESEEM) studies [Isoya et al., Phys. Rev. B **47**(12), 7013–7024 (1993)] we find that the