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Hydrogen distribution in the vicinity of dangling bonds in hydrogenated amorphous silicon (a-Si:H)

✍ Scribed by Fehr, M. ;Schnegg, A. ;Teutloff, C. ;Bittl, R. ;Astakhov, O. ;Finger, F. ;Rech, B. ;Lips, K.

Publisher: John Wiley and Sons
Year: 2010
Tongue: English
Weight: 162 KB
Volume: 207
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200982876

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✦ Synopsis

Abstract

We have investigated the distribution of H atoms around native dangling bonds in a‐Si:H by electron‐nuclear double resonance (ENDOR). In contrast to previous electron spin echo envelope modulation (ESEEM) studies [Isoya et al., Phys. Rev. B 47(12), 7013–7024 (1993)] we find that the distance between H atoms and dangling‐bond defects can be well below r = 3 Å. Our experimental data suggest that the H distribution is continuous and homogeneous and there is no indication for a short‐range order between H atoms and dangling bonds. This work is a first step toward the investigation of the H distribution around light‐induced defects to test models predicting the immediate proximity of H and defects.

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