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On the generation and annealing of dangling bond defects in hydrogenated amorphous silicon

✍ Scribed by G. Müller


Publisher
Springer
Year
1988
Tongue
English
Weight
888 KB
Volume
45
Category
Article
ISSN
1432-0630

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## Abstract We have investigated the distribution of H atoms around native dangling bonds in a‐Si:H by electron‐nuclear double resonance (ENDOR). In contrast to previous electron spin echo envelope modulation (ESEEM) studies [Isoya et al., Phys. Rev. B **47**(12), 7013–7024 (1993)] we find that the