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On the dangling-bond relaxation problem in hydrogenated amorphous silicon

โœ Scribed by A.G. Kazanskii; Mao Yi; Kong Guanglin

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
221 KB
Volume
91
Category
Article
ISSN
0038-1098

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๐Ÿ“œ SIMILAR VOLUMES

Effect of charge on bond strength in hyd
Effect of charge on bond strength in hydrogenated amorphous silicon
โœ B. W. Clare; G. Talukder; P. J. Jennings; J. C. L. Cornish; G. T. Hefter ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 655 KB

We have studied the effect of excess charge on the bond strength in the silanes SiH4 and Si2H6 to assess whether charge trapping in a solid-state lattice might promote the technologically important photodegradation of amorphous silicon alloys (the Staebler-Wronski effect). The calculations indicate