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Voltage and temperature dependence of current noise in double-barrier normal-superconducting structures

✍ Scribed by G. Bignon; F. Pistolesi; M. Houzet

Book ID
111621832
Publisher
Springer
Year
2006
Tongue
English
Weight
278 KB
Volume
50
Category
Article
ISSN
1434-6036

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## Abstract Resonant tunnelling diodes of cubic Al(Ga)N/GaN were grown by plasma assisted molecular beam epitaxy on 3C‐SiC (001). We observe a pronounced negative differential resistance at about 1.2 V with a peak‐to‐valley ratio (PVR) of 1.3 to 2.7 at room temperature. Experimental data is in good