๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Very slow charge trapping and release in ion implanted GaAs [MESFETs]

โœ Scribed by Chiu, C.-H.; Boroumand, F.A.; Swanson, J.G.


Book ID
114538055
Publisher
IEEE
Year
2000
Tongue
English
Weight
134 KB
Volume
47
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Deuterium diffusion, trapping and releas
โœ R.G. Macaulay-Newcombe; D.A. Thompson; W.W. Smeltzer ๐Ÿ“‚ Article ๐Ÿ“… 1991 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 448 KB

High purity beryllium samples were loaded with deuterium by ion-implantation at 25ยฐC or by thermal absorption in D e gas at 300-500ยฐC. The samples were then thermally ramped up to 800ยฐC at rates of 2-3ยฐC/min, and the released deuterium measured as a function of temperature using a mass spectrometer.