A quasi-two-dimensional numerical model of an optically ( ) gated GaAs metal semiconductor field-effect transistor MESFET has been de¨eloped for the characterization of the de¨ice as a photodetector. The model considers the channel to be nonuniformly doped. The model in¨ol¨es the solution of a 1-D P
β¦ LIBER β¦
Observation of Bulk Traps in Ion-Implanted GaAs MESFETs
β Scribed by Blight, S. R. ;Thomas, H.
- Publisher
- John Wiley and Sons
- Year
- 1989
- Tongue
- English
- Weight
- 246 KB
- Volume
- 112
- Category
- Article
- ISSN
- 0031-8965
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