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Very High Silicon Concentration by MOVPE in GaAs

โœ Scribed by Beji, L. ;Chine, Z. ;El Jani, B. ;Oueslati, M.


Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
211 KB
Volume
168
Category
Article
ISSN
0031-8965

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Doping of Silicon Epitaxial Layers With
โœ Dr. H. Krause ๐Ÿ“‚ Article ๐Ÿ“… 1969 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 370 KB

## Doping of Silicon Epitaxial Layers with Arsenic at very High Concentrations Silicon epitaxial layers grown from reduction of SiCl, in H, have been highly doped with arsenic. As an upper limit of doping for layers without structural defects typical to high doping a value of about 2 . 1019 (3111-