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High mobility HgTe and high resistivity CdTe grown by MOVPE on GaAs (001)

✍ Scribed by Bergunde, T. ;Wienecke, M. ;Thomas, B.

Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
280 KB
Volume
121
Category
Article
ISSN
0031-8965

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Structural Defects of Cubic InGaN/GaN Heterostructure Grown on GaAs(001) Substrate by MOVPE Y. Taniyasu 1 ) (a), Y. Watanabe (a), D. H. Lim (a), A. W. Jia (a), M. Shimotomai (a), Y. Kato (a), M. Kobayashi (a), A. Yoshikawa (a), and K. Takahashi (b)