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Very high-frequency small-signal equivalent circuit for short gate-length InP HEMTs

✍ Scribed by Miras, A.; Legros, E.


Book ID
114553006
Publisher
IEEE
Year
1997
Tongue
English
Weight
384 KB
Volume
45
Category
Article
ISSN
0018-9480

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## Abstract An improved model of a modified intrinsic equivalent circuit of delta‐doped AlGaAs/InGaAs/GaAs HEMT, which incorporates the additional capacitive effect physically present due to delta doping and a feedback resistor between gate and drain, is proposed. Admittance parameters of the devic