Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for High-Frequency Applications

✍ Scribed by Malmkvist, M.; Shumin Wang; Grahn, J.V.

• Book ID: 114619033
• Publisher: IEEE
• Year: 2008
• Tongue: English
• Weight: 326 KB
• Volume: 55
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2007.910613