Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for Low-Noise Applications

✍ Scribed by Malmkvist, M.; Shumin Wang; Grahn, J.

• Book ID: 114619263
• Publisher: IEEE
• Year: 2009
• Tongue: English
• Weight: 305 KB
• Volume: 56
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2008.2008163