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Variations in the confining potential of doped AlGaAs/GaAs quantum wells with the photon energy of excitation

✍ Scribed by C.I. Harris; B. Monemar; G. Brunthaler; H. Kalt; K. Köhler; T. Schweizer

Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
285 KB
Volume
9
Category
Article
ISSN
0749-6036

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By selective doping (Be) of the well and barrier regions of GaAs/Al 0.3 Ga 0.7 As structures we have realized the situation where the upper Hubbard band (A þ centers) has been occupied by holes in the equilibrium. We studied the temperature behavior of the Hall effect, variable range hopping (VRH) c