Theory of the doped quantum well APD in the GaAs/AlGaAs and GaInAs/AlInAs material systems
β Scribed by K.F. Brennan
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 436 KB
- Volume
- 2
- Category
- Article
- ISSN
- 0749-6036
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π SIMILAR VOLUMES
We report measurements of photoluminescence (PL) spectra due to A ΓΎ -centers in GaAs/AlGaAs quantum well (QW). We observe temperature and pump dependence of the PL spectra as well as polarized PL spectra taken under an applied magnetic field and uniaxial stress. It was shown that holehole exchange i
We present the electronic structure of p-type d-doped quantum wells in Si and GaAs including exchange effects in the Thomas-Fermi-Dirac approximation. We also carry out Schro Β¨dinger-Poisson self-consistent calculations considering the particularities the exchange potential has in the Local Density