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Variation of photoluminescence with carrier concentration in GaN

โœ Scribed by R.D. Cunningham; R.W. Brander; N.D. Knee; D.K. Wickenden


Book ID
107796637
Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
557 KB
Volume
5
Category
Article
ISSN
0022-2313

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Photoluminescence Dynamics of InGaN/GaN
โœ M. Klose; K.P. Korona; J. Kuhl; M. Heuken ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 204 KB ๐Ÿ‘ 2 views

The photoluminescence (PL) dynamics of InGaN/GaN quantum wells with different In concentrations x In have been measured. The PL emission forms a broad band consisting of two parts with dramatically different dynamics. The high energy part (QW H ) is present only under higher excitation densities (>1