## Abstract Optical properties and carrier dynamics were investigated in a set of samples grown on Si utilizing different layer combinations between the topmost GaN layer and the Si substrate, including AlN/GaN distributed Bragg reflector (DBR) superlattices as well as AlGaN/GaN strainβreducing lay
β¦ LIBER β¦
Terahertz carrier dynamics and dielectric properties of GaN epilayers with different carrier concentrations
β Scribed by Guo, H. C.; Zhang, X. H.; Liu, W.; Yong, A. M.; Tang, S. H.
- Book ID
- 127137896
- Publisher
- American Institute of Physics
- Year
- 2009
- Tongue
- English
- Weight
- 516 KB
- Volume
- 106
- Category
- Article
- ISSN
- 0021-8979
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