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Optical properties and carrier dynamics of two-dimensional electrons in AlGaN∕GaN single heterostructures

✍ Scribed by Kwack, Ho-Sang; Cho, Yong-Hoon; Kim, G. H.; Park, M. R.; Youn, D. H.; Bae, S. B.; Lee, K.-S.; Lee, Jae-Hoon; Lee, Jung-Hee; Kim, T. W.; Kang, T. W.; Wang, Kang L.

Book ID: 127380164
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 318 KB
Volume: 87
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2000334

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## Abstract We evaluate the Al~__x__~ Ga~1–__x__~ N/GaN/Al~__y__~ Ga~1–__y__~ N double heterostructure (DH) for heterostructure field‐effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crack‐free Al~__y__~ Ga~1–__y__~ N buffer layer, so that the Al con