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Monte Carlo calculation of two-dimensional electron dynamics in GaN–AlGaN heterostructures

✍ Scribed by Yu, Tsung-Hsing; Brennan, Kevin F.

Book ID
111903753
Publisher
American Institute of Physics
Year
2002
Tongue
English
Weight
323 KB
Volume
91
Category
Article
ISSN
0021-8979

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## Abstract We evaluate the Al~__x__~ Ga~1–__x__~ N/GaN/Al~__y__~ Ga~1–__y__~ N double heterostructure (DH) for heterostructure field‐effect transistor applications, where the GaN quantum well is compressively strained on a relaxed crack‐free Al~__y__~ Ga~1–__y__~ N buffer layer, so that the Al con