The low-temperature electrical conductivity sT of uncompensated insulating Si:P with P concentration N just below the metalΒ±insulator transition (MIT), i.e. 3X0 Γ 10 18 cm Γ3 $ N $ 3X5 Γ 10 18 cm Γ3 , was measured between 0.05 and 5 K. With decreasing N, sT shows a crossover from Mott variable-range
β¦ LIBER β¦
Variable Range Hopping Conduction in p-Type CuInTe2
β Scribed by M. Iqbal; J. Galibert; S.M. Wasim; E. Hernandez; P. Bocaranda; J. Leotin
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 99 KB
- Volume
- 219
- Category
- Article
- ISSN
- 0370-1972
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