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Hysteresis of the Variable Range Hopping Magnetoresistance in the Moderately Compensated p-type Ge

✍ Scribed by A.G. Andreev; A.V. Chernyaev; S.V. Egorov; R.V. Parfeniev; A.G. Zabrodskii


Publisher
John Wiley and Sons
Year
2000
Tongue
English
Weight
119 KB
Volume
218
Category
Article
ISSN
0370-1972

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Isotopic mixtures of 70 Ge and 74 Ge (Isotopically Engineered: IE-Ge) were by a neutron-transmutation doping (NTD) process provided with a high compensation of K = N As /N Ga ffi 0.4, 0.6, 0.9. Variable range hopping (vrh) resistivity at T = 0.1-4.2 K shows r(T) = r 0 exp(T 0 /T) 1/2 . At K = 0.4-0.