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Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3

✍ Scribed by Mamoru Imade; Yuan Bu; Tomoaki Sumi; Akira Kitamoto; Masashi Yoshimura; Takatomo Sasaki; Masashi Imsemura; Yusuke Mori

Book ID: 116630155
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 382 KB
Volume: 350
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.12.022

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## Abstract Epitaxial layers of monoclinic β‐Ga~2~O~3~ were successfully grown on (0001) sapphire and ($ \bar 1 $11)~As~ GaAs substrates using metal‐organic vapor‐phase epitaxy (MOVPE). Triethylgallium (TEGa) and N~2~O were used as precursors for gallium and oxygen, respectively. Growth conditions