Corrigendum to “Vapor-phase epitaxial growth of GaN films using Ga2O vapor and NH3” [Journal of Crystal Growth 350 (2012) 56–59]

✍ Scribed by Mamoru Imade; Yuan Bu; Tomoaki Sumi; Akira Kitamoto; Masashi Yoshimura; Takatomo Sasaki; Masashi Isemura; Yusuke Mori

• Book ID: 116630352
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 67 KB
• Volume: 356
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2012.06.001