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Valence electronic structure of - single crystal investigated by photoelectron spectroscopy using synchrotron radiation

โœ Scribed by K. Ogawa; M. Sasaki; A. Ohnishi; M. Kitaura; H. Fujimoto; J. Azuma; K. Takahashi; M. Kamada


Publisher
Elsevier
Year
2011
Tongue
English
Weight
253 KB
Volume
11
Category
Article
ISSN
1875-3892

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โœฆ Synopsis


Valence electronic structure of -FeSi 2 single crystal has been investigated by photoelectron spectroscopy using synchrotron radiation. The plate-type -FeSi 2 single crystal has been grown by chemical vapor transport method. The surface contamination and oxide layer were removed by Ne + ion sputtering. The dependence of the valence band spectra on exciting photon energy shows that the strong peak at the binging energy (E Bin ) of 0.5 eV and the shoulder peak at E Bin = 8 eV are assigned to be Fe3d and Si3p orbitals, respectively. Upon the excitation of Fe2p 3/2 , resonant enhancement of the valence band was observed at E Bin = 3.7 eV, which is very similar to Fe metal. This fact suggests the existence of the two-hole satellite states from Fe3d orbitals.


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