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Valence band offsets at oxide/InN interfaces determined by X-ray photoelectron spectroscopy

✍ Scribed by Anja Eisenhardt; Georg Eichapfel; Marcel Himmerlich; Andreas Knübel; Thorsten Passow; Chunyu Wang; Fouad Benkhelifa; Rolf Aidam; Stefan Krischok

Book ID
112182265
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
392 KB
Volume
9
Category
Article
ISSN
1862-6351

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Determination of the valence band offset
Determination of the valence band offsets at HfO2/InN(0001) and InN/In0.3Ga0.7N(0001) heterojunctions using X-ray photoelectron spectroscopy
✍ Eisenhardt, Anja ;Knübel, Andreas ;Schmidt, Ralf ;Himmerlich, Marcel ;Wagner, Jo 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 335 KB

## Abstract The valence band offset (VBO) at a InN/In~0.3~Ga~0.7~N(0001) as well as HfO~2~/InN(0001) heterojunction is investigated by X‐ray photoelectron spectroscopy using monochromated AlKα radiation. The InN and In~0.3~Ga~0.7~N films were grown using plasma‐assisted molecular beam epitaxy, wher