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Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy

✍ Scribed by Wei Wei, Zhixin Qin, Shunfei Fan, Zhiwei Li, Kai Shi, Qinsheng Zhu, Guoyi Zhang

Book ID: 119906161
Publisher: Springer-Verlag
Year: 2012
Tongue: English
Weight: 279 KB
Volume: 7
Category: Article
ISSN: 1931-7573
DOI: 10.1186/1556-276x-7-562

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## Abstract Hexagonal Ge~3~N~4~ layer was prepared on Ge surface by __in situ__ direct atomic source nitridation and it is promising buffer layer to grow GaN on Ge (111). The valence band offset (VBO) of GaN/Ge~3~N~4~/Ge heterojunctions is determined by X‐ray photoemission spectroscopy. The valence